BYT52AZ [BL Galaxy Electrical]
FAST RECOVERY RECTIFIERS; 快恢复二极管
| 型号： | BYT52AZ |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | FAST RECOVERY RECTIFIERS |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
BYT52A(Z)---BYT52M(Z)
BL
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.4 A
FAST RECOVERY RECTIFIERS
FEATURES
Low cost
DO - 15
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon, Alcohol,Isopropanol and
similar solvents
MECHANICAL DATA
Case:JEDEC DO--15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,50Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYT
52A
BYT
52B
BYT
52D
BYT
52G
BYT
52J
BYT
52K
BYT
52M
UNITS
V
V
V
Maximum recurrent peak reverse voltage
Maximum RMS voltage
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
VRRM
VRMS
VDC
50
35
50
Maximum DC blocking voltage
10
1000
Maximum average forw ard rectified current
A
1.4
IF(AV)
9.5mm lead length,
@TA=75
Peak forw ard surge current
A
10ms single half-sine-w ave
IFSM
50.0
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
1.3
5.0
V
VF
IR
(
@ 1.0A
Maximum reverse current
@TA=25
A
at rated DC blocking voltage @TA=100
Maximum reverse recovery time (Note1)
100.0
200
ns
pF
/W
trr
CJ
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
18
45
RqJA
TJ
Operating junction temperature range
-55 ---- + 150
-55 ---- + 150
Storage temperature range
TSTG
NOTE:1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
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3. Thermal resistance f rom junction to ambient.
Document Number 0261043
BLGALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
BYT52A(Z)---BYT52M(Z)
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
trr
50
10
N.1.
N.1.
+0.5A
D.U.T.
(
- )
0
(+)
PULSE
50VDC
(APPROX)
(-)
GENERATOR
(NOTE2)
-0.25A
OSCILLOSCOPE
(NOTE 1)
1
(
+ )
N.1.
-1.0A
1cm
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
2.RISE TIME=10ns MAX. SOURCE IMPEDANCE=5O
SET TIMEBASEFOR50/100 ns /cm
FIG.2 --FORWARD DERATING CURVE
FIG.3 --PEAK FORWARD SURGE CURRENT
90
70
50
2.0
Single Phase
Half Wave 60H
Resistive or
Inductive Load
Z
1.5
1.0
TJ=125
8.3ms Single Half
Sine-Wave
0.5
0.1
30
10
0.05
0.001
0
0
20 40
60 80 100 120
180
1
10
100
AMBIENTTEMPERATURE,
NUMBEROF CYCLES AT60 Hz
FIG.4--TYPICAL FORWARD CHARACTERISTIC
FIG.5--TYPICAL JUNCTION CAPACITANCE
100
100
10
TJ=25
60
40
Pulse Width=300µS
4
2
20
10
1.0
0.4
0.2
0.1
4
TJ=25
f=1MHz
0.06
0.04
2
1
0.02
0.01
.1
.2
.4
1.0
2
4
10
20
40
100
0.6 0.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARDVOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
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2.
Document Number 0261043
BLGALAXY ELECTRICAL
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